Authors:J.-P. Deville, M. Hanbücken,
Publisher: Elsevier Science
Keywords: measurements, applications, concepts, theoretical, strain, epitaxy, stress
Number of Pages: 332
Published: 2001-07-17
List price: $126.00
ISBN-10: 0444508651
ISBN-13: 9780444508652
This book contains keynote lectures which have been delivered at the 3rd Porquerolles’ School on Surface Science, SIR2000 (Surfaces-Interfaces-Relaxation). The aim of this school was to review the main concepts necessary to understand the role of interfacial stress, strain and relaxation in crystal growth by heteroepitaxy. By bringing together scientists from various fields (physics, chemistry, materials science and engineering) which daily use complementary methodological approaches (experiment, theory, modelization), the school allowed to offer 11 multidisciplinary courses. This book a
Author: John D. Cressler
Publisher: CRC Press
Keywords: heterostructure, devices, silicon, epitaxy, strained, layer, sige
Number of Pages: 264
Published: 2007-12-13
List price: $79.95
ISBN-10: 1420066854
ISBN-13: 9781420066852
What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the mate
Authors:Marian A. Herman, W. Richter, Helmut Sitter,
Publisher: Springer
Keywords: implementation, technical, foundation, physical, epitaxy
Number of Pages: 522
Published: 2004-09-20
List price: $209.00
ISBN-10: 3540678212
ISBN-13: 9783540678212
This advanced textbook on epitaxy is intended for undergraduate students, PhD students, reseach scientists, lecturers and practicing engineers interested in material science, solid state electronics and crystal growth, with emphasis put on thin film technology. It provides these readers with a comprehensive, updated knowledge on models and modifications of epitaxy, together with the relevant experimental framework. The technical implementations of epitaxy whcih are presented in this book concern all important expitaxial growth techniques, namely solid phase epitaxy, liquid phase epitaxy, vapor
Authors:Vitaly Shchukin, Nikolai N. Ledentsov, Dieter Bimber
Publisher: Springer
Keywords: technology, nanoscience, nanostructures, epitaxy
Number of Pages: 400
Published: 2003-12-05
List price: $209.00
ISBN-10: 3540678174
ISBN-13: 9783540678175
EPITAXY OF NANOSTRUCTURES focuses on the physical mechanisms behind the spontaneous formation of ordered nanostructures at semiconductor surfaces. These mechanisms are at the root of recent breakthroughs in advanced nanotechnology of quantum-wire and quantum-dot fabrication. Generic theoretical models are presented addressing formation of all basic types of nanostructures, including periodically faceted surfaces, arrays of step-bunches of equal heights and single- and multi-sheet arrays of both 2D and 3D strained islands. Decisive experiments on both structural and optical characterization of
Author: Toshinori Takagi
Publisher: William Andrew
Keywords: science, process, technology, series, materials, epitaxy, cluster, beam, deposition, ionized
Number of Pages: 239
Published: 1990-01-14
List price: $147.00
ISBN-10: 081551168X
ISBN-13: 9780815511687
The technique of ionized-cluster beam (ICB) deposition, the fundamentals of ICB technology, and technical applications of thin films produced by ICB deposition are presented in a single volume to give a coherent presentation to all those interested or working in the field. ICB processes are well characterized and reliable equipment is available. The films deposited are often superior to those deposited by either evaporation or sputtering, and the range of control of the process exceeds other techniques by a great margin.
Authors:Randall M. Feenstra, Dr Colin E. C. Wood,
Publisher: Wiley
Keywords: catalysis, biotechnology, applications, epitaxy, nitride, silicon, carbide, gallium, porous
Number of Pages: 332
Published: 2008-06-23
List price: $190.00
ISBN-10: 0470517522
ISBN-13: 9780470517529
Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more
Author: John D. Cressler
Publisher: CRC Press
Keywords: sige, applications, strained, layer, epitaxy, circuits, devices, heterostructure, handbook, materials, fabrication, silicon
Number of Pages: 1248
Published: 2005-11-01
List price: $189.95
ISBN-10: 0849335590
ISBN-13: 9780849335594
An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source.Featuring broad, comprehensive, and in-depth discussion, this handbo
